document number: 89096 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 13-oct-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 surface mount ultrafast plastic rectifier u2b, u2c, u2d vishay general semiconductor new product features ? oxide planar chip junction ? ultrafast recovery time ? low forward voltag e, low power losses ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. mechanical data case: do-214aa (smb) molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 2.0 a v rrm 100 v, 150 v, 200 v i fsm 50 a t rr 20 ns v f at i f = 2.0 a 0.76 v t j max. 150 c do-214aa ( s mb) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol u2b u2c u2d unit device marking code u2b u2c u2d maximum repetitive pe ak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 2.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 50 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89096 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 13-oct-09 u2b, u2c, u2d vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note (1) free air, mounted on recommended copper pad area. thermal resistance r ja - junction to ambient, r jm - junction to mount ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test condition s symbol typ. max. unit instantaneous forward voltage i f = 2 a t a = 25 c v f (1) 0.86 0.90 v t a = 100 c 0.76 0.83 reverse current rated v r t a = 25 c i r (2) -10 a t a = 100 c 180 350 reverse recovery time i f = 0.5 a, i r = 1.0 a, l rr = 0.25 a t a = 25 c t rr - 20 ns i f = 2.0 a, di/dt = 50 a/s, v r = 30 v, l rr = 0.1 i rm t a = 25 c 27 - t a = 100 c 35 - storage charge i f = 2.0 a, di/dt = 50 a/s, v r = 30 v, l rr = 0.1 i rm t a = 25 c q rr 9- nc t a = 100 c 19 - typical junction capacitance 4.0 v, 1 mhz c j 16 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol u2b u2c u2d unit typical thermal resistance r ja (1) 105 c/w r jm (1) 18 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode u2d-e3/52t 0.099 52t 750 7" diameter plastic tape and reel u2d-e3/5bt 0.099 5bt 3200 13" diameter plastic tape and reel 0 3.0 80 90 100 110 120 130 140 150 average forward rectied current (a) t m - mount temperature (c) 2.0 1.0 re s i s tive or inductive load 0 0.4 0.8 1.2 1.6 2.0 0 2.4 0.4 average power lo ss (w) average forward current (a) 2.0 1.6 1.2 0.8 d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0
document number: 89096 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 13-oct-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 u2b, u2c, u2d vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.1 0.3 0.5 0.7 0.9 1.1 1.3 in s tantaneou s forward voltage (v) 100 10 1 0.1 0.01 t a = 150 c t a = 125 c t a = 25 c t a = 100 c in s tantaneou s forward current (a) 1 10 100 1000 10 000 percent of rated peak rever s e voltage (%) 20 40 60 80 100 0.1 in s tantaneou s rever s e current (a) 10 30 50 70 90 t a = 150 c t a = 125 c t a = 25 c t a = 100 c rever s e voltage (v) junction capacitance (pf) 0.1 10 1 100 10 100 1 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p t - pul s e duration ( s ) tran s ient thermal impedance (c/w) 0.01 10 1 100 100 1000 1 10 0.1 junction to ambient cathode band do-214aa ( s mb) 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) mountin g pad layout 0.086 (2.18) min. 0.060 (1.52) min. 0.085 (2.159) max. 0.220 (5.59) ref.
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